This diagram illustrates the I-V characteristics of an SCR (Silicon Controlled Rectifier), a four-layer semiconductor device with terminals: anode (A), cathode (K), and gate (G). In the reverse biased region, when the cathode is made positive with respect to the anode, only a small leakage current flows until the reverse breakdown voltage is reached, beyond which a large reverse current occurs. In the forward biased region, the SCR initially remains in the forward blocking state even when a forward voltage is applied, allowing only a small leakage current. When the applied voltage exceeds the breakover voltage or a gate signal is applied, the SCR switches to the conducting state, allowing a large forward current to flow. Once conducting, the device continues to conduct even if the gate signal is removed, provided the current remains above the holding current (Ih). This controlled switching behavior makes SCRs widely used in rectifiers, motor control, and power regulation circuits. #ElectronicsEducation #powerelectronics #scr #siliconcontrolledrectifier